STP7NA40 vs PHD83N03LT feature comparison

STP7NA40 STMicroelectronics

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PHD83N03LT NXP Semiconductors

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Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active Obsolete
Ihs Manufacturer STMICROELECTRONICS NXP SEMICONDUCTORS
Part Package Code TO-220AB TO-252
Package Description FLANGE MOUNT, R-PSFM-T3 SMALL OUTLINE, R-PSSO-G2
Pin Count 3 3
Reach Compliance Code not_compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8541.29.00.95
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 210 mJ 120 mJ
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 400 V 25 V
Drain Current-Max (ID) 6.5 A 72 A
Drain-source On Resistance-Max 1 Ω 0.012 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 43 pF
JEDEC-95 Code TO-220AB TO-252
JESD-30 Code R-PSFM-T3 R-PSSO-G2
JESD-609 Code e3
Number of Elements 1 1
Number of Terminals 3 2
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style FLANGE MOUNT SMALL OUTLINE
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation Ambient-Max 100 W
Power Dissipation-Max (Abs) 100 W
Pulsed Drain Current-Max (IDM) 26 A 240 A
Qualification Status Not Qualified Not Qualified
Surface Mount NO YES
Terminal Finish MATTE TIN
Terminal Form THROUGH-HOLE GULL WING
Terminal Position SINGLE SINGLE
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Turn-on Time-Max (ton) 135 ns
Base Number Matches 2 1
Case Connection DRAIN

Compare STP7NA40 with alternatives

Compare PHD83N03LT with alternatives