STP3NA80 vs BUZ80 feature comparison

STP3NA80 STMicroelectronics

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BUZ80 Infineon Technologies AG

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Rohs Code No No
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer STMICROELECTRONICS INFINEON TECHNOLOGIES AG
Part Package Code TO-220AB SFM
Package Description FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3
Pin Count 3 3
Reach Compliance Code not_compliant not_compliant
ECCN Code EAR99 EAR99
Avalanche Energy Rating (Eas) 48 mJ 320 mJ
Configuration SINGLE WITH BUILT-IN DIODE SINGLE
DS Breakdown Voltage-Min 800 V 800 V
Drain Current-Max (ID) 3.1 A 2.6 A
Drain-source On Resistance-Max 4.5 Ω 4 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB TO-220AB
JESD-30 Code R-PSFM-T3 R-PSFM-T3
JESD-609 Code e0 e0
Number of Elements 1 1
Number of Terminals 3 3
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style FLANGE MOUNT FLANGE MOUNT
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 100 W 75 W
Pulsed Drain Current-Max (IDM) 12.5 A 10 A
Qualification Status Not Qualified Not Qualified
Surface Mount NO NO
Terminal Finish TIN LEAD TIN LEAD
Terminal Form THROUGH-HOLE THROUGH-HOLE
Terminal Position SINGLE SINGLE
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 2 8
Additional Feature AVALANCHE RATED

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