STP3NA60 vs IPD90N06S306ATMA1 feature comparison

STP3NA60 STMicroelectronics

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IPD90N06S306ATMA1 Infineon Technologies AG

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Rohs Code No
Part Life Cycle Code Obsolete Active
Ihs Manufacturer STMICROELECTRONICS INFINEON TECHNOLOGIES AG
Part Package Code TO-220AB
Package Description FLANGE MOUNT, R-PSFM-T3 GREEN, TO-252, 3 PIN
Pin Count 3
Reach Compliance Code not_compliant compliant
ECCN Code EAR99 EAR99
Additional Feature AVALANCHE RATED ULTRA LOW RESISTANCE
Avalanche Energy Rating (Eas) 42 mJ 250 mJ
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600 V 55 V
Drain Current-Max (ID) 2.9 A 90 A
Drain-source On Resistance-Max 4 Ω 0.006 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB TO-252AA
JESD-30 Code R-PSFM-T3 R-PSSO-G2
JESD-609 Code e0
Number of Elements 1 1
Number of Terminals 3 2
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style FLANGE MOUNT SMALL OUTLINE
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 80 W
Pulsed Drain Current-Max (IDM) 11.6 A 360 A
Qualification Status Not Qualified
Surface Mount NO YES
Terminal Finish TIN LEAD
Terminal Form THROUGH-HOLE GULL WING
Terminal Position SINGLE SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 2 1
Case Connection DRAIN

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