STP11N52K3 vs STB11N52K3 feature comparison

STP11N52K3 STMicroelectronics

Buy Now Datasheet

STB11N52K3 STMicroelectronics

Buy Now Datasheet
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer STMICROELECTRONICS STMICROELECTRONICS
Part Package Code TO-220AB D2PAK
Package Description 3 PIN D2PAK-3
Pin Count 3 4
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
Samacsys Manufacturer STMicroelectronics STMicroelectronics
Additional Feature ULTRA-LOW RESISTANCE ULTRA-LOW RESISTANCE
Avalanche Energy Rating (Eas) 170 mJ 170 mJ
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 525 V 525 V
Drain Current-Max (ID) 10 A 10 A
Drain-source On Resistance-Max 0.51 Ω 0.51 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB TO-263AB
JESD-30 Code R-PSFM-T3 R-PSSO-G2
Number of Elements 1 1
Number of Terminals 3 2
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style FLANGE MOUNT SMALL OUTLINE
Polarity/Channel Type N-CHANNEL N-CHANNEL
Pulsed Drain Current-Max (IDM) 40 A 40 A
Surface Mount NO YES
Terminal Form THROUGH-HOLE GULL WING
Terminal Position SINGLE SINGLE
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 1 1

Compare STP11N52K3 with alternatives

Compare STB11N52K3 with alternatives