STP10NM60ND vs STP10NM60N feature comparison

STP10NM60ND STMicroelectronics

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STP10NM60N STMicroelectronics

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Rohs Code Yes Yes
Part Life Cycle Code Obsolete Active
Ihs Manufacturer STMICROELECTRONICS STMICROELECTRONICS
Part Package Code TO-220AB TO-220AB
Package Description TO-220, 3 PIN TO-220, 3 PIN
Pin Count 3 3
Reach Compliance Code compliant not_compliant
ECCN Code EAR99 EAR99
Samacsys Manufacturer STMicroelectronics STMicroelectronics
Avalanche Energy Rating (Eas) 130 mJ 200 mJ
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600 V 600 V
Drain Current-Max (ID) 8 A 8 A
Drain-source On Resistance-Max 0.6 Ω 0.55 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB TO-220AB
JESD-30 Code R-PSFM-T3 R-PSFM-T3
JESD-609 Code e3 e3
Number of Elements 1 1
Number of Terminals 3 3
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style FLANGE MOUNT FLANGE MOUNT
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 70 W 70 W
Pulsed Drain Current-Max (IDM) 32 A 32 A
Surface Mount NO NO
Terminal Finish MATTE TIN Matte Tin (Sn)
Terminal Form THROUGH-HOLE THROUGH-HOLE
Terminal Position SINGLE SINGLE
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 1 1
Factory Lead Time 16 Weeks
Additional Feature AVALANCHE ENERGY RATED
Case Connection DRAIN
Feedback Cap-Max (Crss) 1.2 pF
Operating Temperature-Min -55 °C
Peak Reflow Temperature (Cel) NOT SPECIFIED
Qualification Status Not Qualified
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Turn-off Time-Max (toff) 47 ns
Turn-on Time-Max (ton) 22 ns

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Compare STP10NM60N with alternatives