STN2N10L vs MMFT1N10ET3 feature comparison

STN2N10L STMicroelectronics

Buy Now Datasheet

MMFT1N10ET3 Motorola Mobility LLC

Buy Now Datasheet
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active Transferred
Ihs Manufacturer STMICROELECTRONICS MOTOROLA INC
Part Package Code SOT-223
Package Description SMALL OUTLINE, R-PDSO-G4 SMALL OUTLINE, R-PDSO-G4
Pin Count 4
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V 100 V
Drain Current-Max (ID) 2 A 1 A
Drain-source On Resistance-Max 0.5 Ω 0.25 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 30 pF
JESD-30 Code R-PDSO-G4 R-PDSO-G4
JESD-609 Code e3
Number of Elements 1 1
Number of Terminals 4 4
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 2.7 W
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Finish MATTE TIN
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 1 1
HTS Code 8541.21.00.95
Additional Feature AVALANCHE RATED
JEDEC-95 Code TO-261AA
Power Dissipation Ambient-Max 0.8 W

Compare STN2N10L with alternatives

Compare MMFT1N10ET3 with alternatives