STI28N60M2
vs
LSC20N65
feature comparison
| Rohs Code |
Yes
|
|
| Part Life Cycle Code |
Active
|
|
| Ihs Manufacturer |
STMICROELECTRONICS
|
|
| Package Description |
I2PAK-3
|
|
| Reach Compliance Code |
not_compliant
|
|
| ECCN Code |
EAR99
|
|
| Factory Lead Time |
16 Weeks
|
|
| Date Of Intro |
2017-03-16
|
|
| Samacsys Manufacturer |
STMicroelectronics
|
|
| Avalanche Energy Rating (Eas) |
350 mJ
|
|
| Case Connection |
DRAIN
|
|
| Configuration |
SINGLE WITH BUILT-IN DIODE
|
|
| DS Breakdown Voltage-Min |
600 V
|
|
| Drain Current-Max (ID) |
22 A
|
|
| Drain-source On Resistance-Max |
0.15 Ω
|
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
|
| JESD-30 Code |
R-PSIP-T3
|
|
| Number of Elements |
1
|
|
| Number of Terminals |
3
|
|
| Operating Mode |
ENHANCEMENT MODE
|
|
| Operating Temperature-Max |
150 °C
|
|
| Operating Temperature-Min |
-55 °C
|
|
| Package Body Material |
PLASTIC/EPOXY
|
|
| Package Shape |
RECTANGULAR
|
|
| Package Style |
IN-LINE
|
|
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
|
| Polarity/Channel Type |
N-CHANNEL
|
|
| Power Dissipation-Max (Abs) |
170 W
|
|
| Pulsed Drain Current-Max (IDM) |
88 A
|
|
| Surface Mount |
NO
|
|
| Terminal Form |
THROUGH-HOLE
|
|
| Terminal Position |
SINGLE
|
|
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
|
| Transistor Application |
SWITCHING
|
|
| Transistor Element Material |
SILICON
|
|
| Base Number Matches |
1
|
|
|
|
|
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