STI21NM60ND
vs
SIHB18N60E-GE3
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Obsolete
Active
Ihs Manufacturer
STMICROELECTRONICS
VISHAY INTERTECHNOLOGY INC
Part Package Code
TO-262AA
Package Description
IN-LINE, R-PSIP-T3
SMALL OUTLINE, R-PSSO-G2
Pin Count
3
Reach Compliance Code
unknown
compliant
ECCN Code
EAR99
EAR99
Avalanche Energy Rating (Eas)
610 mJ
204 mJ
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
600 V
600 V
Drain Current-Max (ID)
17 A
18 A
Drain-source On Resistance-Max
0.22 Ω
0.202 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-262AA
TO-263AB
JESD-30 Code
R-PSIP-T3
R-PSSO-G2
Number of Elements
1
1
Number of Terminals
3
2
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
IN-LINE
SMALL OUTLINE
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Power Dissipation-Max (Abs)
140 W
Pulsed Drain Current-Max (IDM)
68 A
45 A
Qualification Status
Not Qualified
Surface Mount
NO
YES
Terminal Form
THROUGH-HOLE
GULL WING
Terminal Position
SINGLE
SINGLE
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
1
1
Rohs Code
Factory Lead Time
19 Weeks
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Compare STI21NM60ND with alternatives
Compare SIHB18N60E-GE3 with alternatives