STI20NM65N vs SIHB22N65E-GE3 feature comparison

STI20NM65N STMicroelectronics

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SIHB22N65E-GE3 Vishay Intertechnologies

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Pbfree Code Yes Yes
Rohs Code Yes Yes
Part Life Cycle Code Obsolete Active
Ihs Manufacturer STMICROELECTRONICS VISHAY INTERTECHNOLOGY INC
Part Package Code TO-262AA
Package Description IN-LINE, R-PSIP-T3 SMALL OUTLINE, R-PSSO-G2
Pin Count 3
Reach Compliance Code not_compliant compliant
ECCN Code EAR99 EAR99
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 500 mJ 691 mJ
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 650 V 650 V
Drain Current-Max (ID) 19 A 22 A
Drain-source On Resistance-Max 0.19 Ω 0.18 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-262AA TO-263AB
JESD-30 Code R-PSIP-T3 R-PSSO-G2
JESD-609 Code e3
Number of Elements 1 1
Number of Terminals 3 2
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style IN-LINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 245 NOT SPECIFIED
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 160 W 227 W
Pulsed Drain Current-Max (IDM) 76 A 56 A
Qualification Status Not Qualified
Surface Mount NO YES
Terminal Finish MATTE TIN
Terminal Form THROUGH-HOLE GULL WING
Terminal Position SINGLE SINGLE
Time@Peak Reflow Temperature-Max (s) 40 NOT SPECIFIED
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 1 1
Factory Lead Time 18 Weeks
Samacsys Manufacturer Vishay
Case Connection DRAIN
Feedback Cap-Max (Crss) 4 pF
Operating Temperature-Min -55 °C
Turn-off Time-Max (toff) 186 ns
Turn-on Time-Max (ton) 111 ns

Compare STI20NM65N with alternatives

Compare SIHB22N65E-GE3 with alternatives