STFI28N60M2 vs LSB20N65F feature comparison

STFI28N60M2 STMicroelectronics

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LSB20N65F Xi’an Lonten Renewable Energy Technology Inc

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Rohs Code Yes Yes
Part Life Cycle Code Obsolete Contact Manufacturer
Ihs Manufacturer STMICROELECTRONICS XIAN LONTEN RENEWABLE ENERGY TECHNOLOGY INC
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
Peak Reflow Temperature (Cel) NOT SPECIFIED NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED NOT SPECIFIED
Base Number Matches 1 1
Package Description FLANGE MOUNT, R-PSFM-T3
Avalanche Energy Rating (Eas) 700 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 650 V
Drain Current-Max (ID) 20 A
Drain-source On Resistance-Max 0.16 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-247
JESD-30 Code R-PSFM-T3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 60 A
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

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