STD8NM60N vs NDB706AL feature comparison

STD8NM60N STMicroelectronics

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NDB706AL National Semiconductor Corporation

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Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer STMICROELECTRONICS NATIONAL SEMICONDUCTOR CORP
Package Description ROHS COMPLIANT, DPAK-3 SMALL OUTLINE, R-PSSO-G2
Pin Count 3
Reach Compliance Code not_compliant unknown
ECCN Code EAR99 EAR99
Additional Feature AVALANCHE RATED LOGIC LEVEL COMPATIBLE
Avalanche Energy Rating (Eas) 200 mJ
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600 V 60 V
Drain Current-Max (ID) 7 A 75 A
Drain-source On Resistance-Max 0.65 Ω 0.015 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSSO-G2 R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1 1
Number of Terminals 2 2
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 175 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 70 W
Pulsed Drain Current-Max (IDM) 28 A 225 A
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Finish Matte Tin (Sn)
Terminal Form GULL WING GULL WING
Terminal Position SINGLE SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 1 2
HTS Code 8541.29.00.95
Case Connection DRAIN
Feedback Cap-Max (Crss) 800 pF
JEDEC-95 Code TO-263AB
Power Dissipation Ambient-Max 150 W
Turn-off Time-Max (toff) 550 ns
Turn-on Time-Max (ton) 640 ns

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