STD86N3LH5
vs
NDB706AL
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Active
Obsolete
Ihs Manufacturer
STMICROELECTRONICS
NATIONAL SEMICONDUCTOR CORP
Part Package Code
TO-252
Package Description
ROHS COMPLIANT, DPAK-3
SMALL OUTLINE, R-PSSO-G2
Pin Count
3
Reach Compliance Code
not_compliant
unknown
ECCN Code
EAR99
EAR99
Factory Lead Time
16 Weeks, 3 Days
Samacsys Manufacturer
STMicroelectronics
Avalanche Energy Rating (Eas)
165 mJ
Case Connection
DRAIN
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
30 V
60 V
Drain Current-Max (ID)
80 A
75 A
Drain-source On Resistance-Max
0.0065 Ω
0.015 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-252
TO-263AB
JESD-30 Code
R-PSSO-G2
R-PSSO-G2
JESD-609 Code
e3
Moisture Sensitivity Level
1
Number of Elements
1
1
Number of Terminals
2
2
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
175 °C
175 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Peak Reflow Temperature (Cel)
260
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Power Dissipation-Max (Abs)
70 W
Pulsed Drain Current-Max (IDM)
320 A
225 A
Qualification Status
Not Qualified
Not Qualified
Surface Mount
YES
YES
Terminal Finish
Matte Tin (Sn) - annealed
Terminal Form
GULL WING
GULL WING
Terminal Position
SINGLE
SINGLE
Time@Peak Reflow Temperature-Max (s)
30
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
1
2
HTS Code
8541.29.00.95
Additional Feature
LOGIC LEVEL COMPATIBLE
Feedback Cap-Max (Crss)
800 pF
Power Dissipation Ambient-Max
150 W
Turn-off Time-Max (toff)
550 ns
Turn-on Time-Max (ton)
640 ns
Compare STD86N3LH5 with alternatives
Compare NDB706AL with alternatives