STD7NK30Z
vs
IXFX66N50Q2
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
STMICROELECTRONICS
IXYS CORP
Part Package Code
TO-252AA
Package Description
SMALL OUTLINE, R-PSSO-G2
IN-LINE, R-PSIP-T3
Pin Count
3
3
Reach Compliance Code
unknown
compliant
ECCN Code
EAR99
EAR99
Avalanche Energy Rating (Eas)
130 mJ
4000 mJ
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
300 V
500 V
Drain Current-Max (ID)
5 A
66 A
Drain-source On Resistance-Max
0.9 Ω
0.08 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-252AA
JESD-30 Code
R-PSSO-G2
R-PSIP-T3
Number of Elements
1
1
Number of Terminals
2
3
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
150 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
IN-LINE
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Power Dissipation-Max (Abs)
50 W
735 W
Pulsed Drain Current-Max (IDM)
20 A
264 A
Qualification Status
Not Qualified
Not Qualified
Surface Mount
YES
NO
Terminal Form
GULL WING
THROUGH-HOLE
Terminal Position
SINGLE
SINGLE
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
1
1
Rohs Code
Additional Feature
AVALANCHE RATED
Case Connection
DRAIN
JESD-609 Code
e1
Terminal Finish
TIN SILVER COPPER
Compare STD7NK30Z with alternatives
Compare IXFX66N50Q2 with alternatives