STD6NM60N-1 vs STU27N3LH5 feature comparison

STD6NM60N-1 STMicroelectronics

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STU27N3LH5 STMicroelectronics

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Rohs Code Yes Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer STMICROELECTRONICS STMICROELECTRONICS
Part Package Code TO-251 TO-251
Package Description LEAD FREE, IPAK-3 ROHS COMPLIANT, IPAK-3
Pin Count 3 3
Reach Compliance Code not_compliant not_compliant
ECCN Code EAR99 EAR99
Samacsys Manufacturer STMicroelectronics
Avalanche Energy Rating (Eas) 65 mJ 50 mJ
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600 V 30 V
Drain Current-Max (ID) 4.6 A 27 A
Drain-source On Resistance-Max 0.92 Ω 0.028 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-251 TO-251
JESD-30 Code R-PSIP-T3 R-PSIP-T3
JESD-609 Code e3 e3
Moisture Sensitivity Level 1 1
Number of Elements 1 1
Number of Terminals 3 3
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 175 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style IN-LINE IN-LINE
Peak Reflow Temperature (Cel) NOT SPECIFIED 260
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 45 W 30 W
Pulsed Drain Current-Max (IDM) 18.4 A 108 A
Qualification Status Not Qualified Not Qualified
Surface Mount NO NO
Terminal Finish Matte Tin (Sn) MATTE TIN
Terminal Form THROUGH-HOLE THROUGH-HOLE
Terminal Position SINGLE SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED 30
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 1 1
Pbfree Code Yes
Case Connection DRAIN