STD3NK50ZT4 vs SSP6N70A feature comparison

STD3NK50ZT4 STMicroelectronics

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SSP6N70A Samsung Semiconductor

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Rohs Code Yes
Part Life Cycle Code Active Transferred
Ihs Manufacturer STMICROELECTRONICS SAMSUNG SEMICONDUCTOR INC
Part Package Code TO-252AA TO-220AB
Package Description DPAK-3 FLANGE MOUNT, R-PSFM-T3
Pin Count 3 3
Reach Compliance Code not_compliant unknown
ECCN Code EAR99 EAR99
Factory Lead Time 13 Weeks
Samacsys Manufacturer STMicroelectronics
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 500 V 700 V
Drain Current-Max (ID) 2.3 A 6 A
Drain-source On Resistance-Max 3.5 Ω 1.8 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-252AA TO-220AB
JESD-30 Code R-PSSO-G2 R-PSFM-T3
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1 1
Number of Terminals 2 3
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE FLANGE MOUNT
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 45 W 130 W
Pulsed Drain Current-Max (IDM) 9.2 A 24 A
Qualification Status Not Qualified Not Qualified
Surface Mount YES NO
Terminal Finish Matte Tin (Sn) - annealed
Terminal Form GULL WING THROUGH-HOLE
Terminal Position SINGLE SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 1 2
Avalanche Energy Rating (Eas) 582 mJ

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