STD2NA60-1 vs SPB80N06S2-07 feature comparison

STD2NA60-1 STMicroelectronics

Buy Now Datasheet

SPB80N06S2-07 Infineon Technologies AG

Buy Now Datasheet
Rohs Code No
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer STMICROELECTRONICS INFINEON TECHNOLOGIES AG
Part Package Code TO-251AA D2PAK
Package Description IPAK-3 SMALL OUTLINE, R-PSSO-G2
Pin Count 3 4
Reach Compliance Code not_compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8541.29.00.95
Additional Feature AVALANCHE RATED AVALANCHE RATED
Avalanche Energy Rating (Eas) 26 mJ 530 mJ
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600 V 55 V
Drain Current-Max (ID) 2.3 A 80 A
Drain-source On Resistance-Max 4 Ω 0.0066 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 23 pF
JEDEC-95 Code TO-251AA TO-263AB
JESD-30 Code R-PSIP-T3 R-PSSO-G2
JESD-609 Code e0 e3
Number of Elements 1 1
Number of Terminals 3 2
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 175 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style IN-LINE SMALL OUTLINE
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation Ambient-Max 50 W
Power Dissipation-Max (Abs) 50 W 250 W
Pulsed Drain Current-Max (IDM) 9.2 A 320 A
Qualification Status Not Qualified Not Qualified
Surface Mount NO YES
Terminal Finish TIN LEAD MATTE TIN
Terminal Form THROUGH-HOLE GULL WING
Terminal Position SINGLE SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON SILICON
Turn-on Time-Max (ton) 55 ns
Base Number Matches 1 1

Compare STD2NA60-1 with alternatives

Compare SPB80N06S2-07 with alternatives