STD1NK60-1
vs
STD5NE10T4
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Active
Obsolete
Ihs Manufacturer
STMICROELECTRONICS
STMICROELECTRONICS
Part Package Code
TO-251AA
TO-252AA
Package Description
IPAK-3
DPAK-3
Pin Count
3
3
Reach Compliance Code
not_compliant
unknown
ECCN Code
EAR99
EAR99
Factory Lead Time
13 Weeks
Samacsys Manufacturer
STMicroelectronics
Avalanche Energy Rating (Eas)
25 mJ
25 mJ
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
600 V
100 V
Drain Current-Max (ID)
1 A
5 A
Drain-source On Resistance-Max
8.5 Ω
0.4 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-251AA
TO-252AA
JESD-30 Code
R-PSIP-T3
R-PSSO-G2
JESD-609 Code
e3
e0
Moisture Sensitivity Level
1
Number of Elements
1
1
Number of Terminals
3
2
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
175 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
IN-LINE
SMALL OUTLINE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Power Dissipation-Max (Abs)
30 W
25 W
Pulsed Drain Current-Max (IDM)
4 A
20 A
Qualification Status
Not Qualified
Not Qualified
Surface Mount
NO
YES
Terminal Finish
Matte Tin (Sn)
TIN LEAD
Terminal Form
THROUGH-HOLE
GULL WING
Terminal Position
SINGLE
SINGLE
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
1
1
Additional Feature
AVALANCHE RATED
Case Connection
DRAIN
Compare STD1NK60-1 with alternatives
Compare STD5NE10T4 with alternatives