STD11N50M2
vs
SPD08N50C3
feature comparison
| Rohs Code |
Yes
|
Yes
|
| Part Life Cycle Code |
Active
|
Not Recommended
|
| Ihs Manufacturer |
STMICROELECTRONICS
|
INFINEON TECHNOLOGIES AG
|
| Reach Compliance Code |
not_compliant
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| Factory Lead Time |
32 Weeks, 4 Days
|
4 Weeks
|
| Samacsys Manufacturer |
STMicroelectronics
|
Infineon
|
| Configuration |
SINGLE
|
SINGLE WITH BUILT-IN DIODE
|
| Drain Current-Max (ID) |
8 A
|
7.6 A
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| Number of Elements |
1
|
1
|
| Operating Temperature-Max |
150 °C
|
150 °C
|
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
260
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Power Dissipation-Max (Abs) |
85 W
|
83 W
|
| Surface Mount |
YES
|
YES
|
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
NOT SPECIFIED
|
| Base Number Matches |
1
|
5
|
| Pbfree Code |
|
Yes
|
| Part Package Code |
|
TO-252AA
|
| Package Description |
|
SMALL OUTLINE, R-PSSO-G2
|
| Pin Count |
|
3
|
| Additional Feature |
|
AVALANCHE RATED, HIGH VOLTAGE
|
| Avalanche Energy Rating (Eas) |
|
230 mJ
|
| Case Connection |
|
DRAIN
|
| DS Breakdown Voltage-Min |
|
500 V
|
| Drain-source On Resistance-Max |
|
0.6 Ω
|
| JEDEC-95 Code |
|
TO-252AA
|
| JESD-30 Code |
|
R-PSSO-G2
|
| JESD-609 Code |
|
e3
|
| Moisture Sensitivity Level |
|
1
|
| Number of Terminals |
|
2
|
| Operating Mode |
|
ENHANCEMENT MODE
|
| Package Body Material |
|
PLASTIC/EPOXY
|
| Package Shape |
|
RECTANGULAR
|
| Package Style |
|
SMALL OUTLINE
|
| Pulsed Drain Current-Max (IDM) |
|
22.8 A
|
| Qualification Status |
|
Not Qualified
|
| Terminal Finish |
|
Tin (Sn)
|
| Terminal Form |
|
GULL WING
|
| Terminal Position |
|
SINGLE
|
| Transistor Application |
|
SWITCHING
|
| Transistor Element Material |
|
SILICON
|
|
|
|
Compare STD11N50M2 with alternatives
Compare SPD08N50C3 with alternatives