STB9NK60ZD
vs
FQB7N60TM_WS
feature comparison
All Stats
Differences Only
Pbfree Code
Yes
Rohs Code
Yes
Yes
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
STMICROELECTRONICS
ON SEMICONDUCTOR
Package Description
ROHS COMPLIANT, D2PAK-3
SMALL OUTLINE, R-PSSO-G2
Pin Count
3
Reach Compliance Code
not_compliant
compliant
ECCN Code
EAR99
EAR99
Avalanche Energy Rating (Eas)
235 mJ
580 mJ
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
600 V
600 V
Drain Current-Max (ID)
7 A
7.4 A
Drain-source On Resistance-Max
0.95 Ω
1 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code
R-PSSO-G2
R-PSSO-G2
JESD-609 Code
e3
Moisture Sensitivity Level
1
1
Number of Elements
1
1
Number of Terminals
2
2
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
150 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Power Dissipation-Max (Abs)
104 W
142 W
Pulsed Drain Current-Max (IDM)
28 A
29.6 A
Qualification Status
Not Qualified
Surface Mount
YES
YES
Terminal Finish
MATTE TIN
Terminal Form
GULL WING
GULL WING
Terminal Position
SINGLE
SINGLE
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
2
2
Manufacturer Package Code
TO263A02
Factory Lead Time
4 Weeks
Case Connection
DRAIN
JEDEC-95 Code
TO-262AB
Peak Reflow Temperature (Cel)
245
Time@Peak Reflow Temperature-Max (s)
30
Compare STB9NK60ZD with alternatives
Compare FQB7N60TM_WS with alternatives