STB9NK60ZD vs FQB7N60TM_WS feature comparison

STB9NK60ZD STMicroelectronics

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FQB7N60TM_WS onsemi

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Pbfree Code Yes
Rohs Code Yes Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer STMICROELECTRONICS ON SEMICONDUCTOR
Package Description ROHS COMPLIANT, D2PAK-3 SMALL OUTLINE, R-PSSO-G2
Pin Count 3
Reach Compliance Code not_compliant compliant
ECCN Code EAR99 EAR99
Avalanche Energy Rating (Eas) 235 mJ 580 mJ
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600 V 600 V
Drain Current-Max (ID) 7 A 7.4 A
Drain-source On Resistance-Max 0.95 Ω 1 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSSO-G2 R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1 1
Number of Elements 1 1
Number of Terminals 2 2
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 104 W 142 W
Pulsed Drain Current-Max (IDM) 28 A 29.6 A
Qualification Status Not Qualified
Surface Mount YES YES
Terminal Finish MATTE TIN
Terminal Form GULL WING GULL WING
Terminal Position SINGLE SINGLE
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 2 2
Manufacturer Package Code TO263A02
Factory Lead Time 4 Weeks
Case Connection DRAIN
JEDEC-95 Code TO-262AB
Peak Reflow Temperature (Cel) 245
Time@Peak Reflow Temperature-Max (s) 30

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