STB9NC60T4 vs IXTP10N60P feature comparison

STB9NC60T4 STMicroelectronics

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IXTP10N60P IXYS Corporation

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Rohs Code Yes Yes
Part Life Cycle Code Obsolete Transferred
Ihs Manufacturer STMICROELECTRONICS IXYS CORP
Part Package Code D2PAK TO-220AB
Package Description SMALL OUTLINE, R-PSSO-G2 TO-220, 3 PIN
Pin Count 3 3
Reach Compliance Code not_compliant compliant
ECCN Code EAR99 EAR99
Avalanche Energy Rating (Eas) 850 mJ 500 mJ
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600 V 600 V
Drain Current-Max (ID) 9 A 10 A
Drain-source On Resistance-Max 0.75 Ω 0.74 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-263AB TO-220AB
JESD-30 Code R-PSSO-G2 R-PSFM-T3
JESD-609 Code e3
Number of Elements 1 1
Number of Terminals 2 3
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE FLANGE MOUNT
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 125 W 200 W
Pulsed Drain Current-Max (IDM) 36 A 30 A
Qualification Status Not Qualified Not Qualified
Surface Mount YES NO
Terminal Finish MATTE TIN PURE TIN
Terminal Form GULL WING THROUGH-HOLE
Terminal Position SINGLE SINGLE
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 1 2
Pbfree Code Yes
Additional Feature AVALANCHE RATED

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