STB8NM60N
vs
IXFH14N80
feature comparison
All Stats
Differences Only
Pbfree Code
Rohs Code
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
STMICROELECTRONICS
LITTELFUSE INC
Part Package Code
D2PAK
Package Description
ROHS COMPLIANT, TO-263, D2PAK-3
FLANGE MOUNT, R-PSFM-T3
Pin Count
4
Reach Compliance Code
not_compliant
compliant
ECCN Code
EAR99
EAR99
Additional Feature
AVALANCHE ENERGY RATED
AVALANCHE RATED
Avalanche Energy Rating (Eas)
200 mJ
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
600 V
800 V
Drain Current-Max (ID)
7 A
14 A
Drain-source On Resistance-Max
0.65 Ω
0.7 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-263AB
TO-247AD
JESD-30 Code
R-PSSO-G2
R-PSFM-T3
JESD-609 Code
e3
e3
Moisture Sensitivity Level
1
Number of Elements
1
1
Number of Terminals
2
3
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
150 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
FLANGE MOUNT
Peak Reflow Temperature (Cel)
245
260
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Power Dissipation-Max (Abs)
70 W
300 W
Pulsed Drain Current-Max (IDM)
28 A
56 A
Qualification Status
Not Qualified
Not Qualified
Surface Mount
YES
NO
Terminal Finish
MATTE TIN
Matte Tin (Sn)
Terminal Form
GULL WING
THROUGH-HOLE
Terminal Position
SINGLE
SINGLE
Time@Peak Reflow Temperature-Max (s)
30
10
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
1
2
HTS Code
8541.29.00.95
Samacsys Manufacturer
LITTELFUSE
Case Connection
DRAIN
Operating Temperature-Min
-55 °C
Power Dissipation Ambient-Max
300 W
Turn-off Time-Max (toff)
150 ns
Turn-on Time-Max (ton)
100 ns
Compare STB8NM60N with alternatives
Compare IXFH14N80 with alternatives