STB85NF55
vs
STB85NF55T4
feature comparison
All Stats
Differences Only
Pbfree Code
Yes
Rohs Code
Yes
Yes
Part Life Cycle Code
Active
Active
Ihs Manufacturer
STMICROELECTRONICS
STMICROELECTRONICS
Part Package Code
D2PAK
D2PAK
Package Description
SMALL OUTLINE, R-PSSO-G2
TO-263, D2PAK-3
Pin Count
4
4
Reach Compliance Code
not_compliant
not_compliant
ECCN Code
EAR99
EAR99
Avalanche Energy Rating (Eas)
980 mJ
980 mJ
Case Connection
DRAIN
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
55 V
55 V
Drain Current-Max (ID)
80 A
80 A
Drain-source On Resistance-Max
0.008 Ω
0.008 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-263AB
TO-263AB
JESD-30 Code
R-PSSO-G2
R-PSSO-G2
JESD-609 Code
e3
e3
Number of Elements
1
1
Number of Terminals
2
2
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
175 °C
175 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
245
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Power Dissipation-Max (Abs)
300 W
300 W
Pulsed Drain Current-Max (IDM)
320 A
320 A
Qualification Status
Not Qualified
Not Qualified
Surface Mount
YES
YES
Terminal Finish
Matte Tin (Sn)
Matte Tin (Sn) - annealed
Terminal Form
GULL WING
GULL WING
Terminal Position
SINGLE
SINGLE
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
30
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
1
1
Factory Lead Time
26 Weeks
Samacsys Manufacturer
STMicroelectronics
Moisture Sensitivity Level
1
Compare STB85NF55 with alternatives
Compare STB85NF55T4 with alternatives