STB60NF06LT4 vs FDB13AN06A0 feature comparison

STB60NF06LT4 STMicroelectronics

Buy Now Datasheet

FDB13AN06A0 onsemi

Buy Now Datasheet
Rohs Code Yes
Part Life Cycle Code Active Active
Ihs Manufacturer STMICROELECTRONICS ONSEMI
Part Package Code D2PAK
Package Description D2PAK-3 TO-263AB, 3 PIN
Pin Count 3
Reach Compliance Code not_compliant not_compliant
ECCN Code EAR99 EAR99
Factory Lead Time 39 Weeks 46 Weeks
Samacsys Manufacturer STMicroelectronics onsemi
Additional Feature LOW THRESHOLD, AVALANCHE RATED
Avalanche Energy Rating (Eas) 320 mJ 56 mJ
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V 60 V
Drain Current-Max (ID) 60 A 62 A
Drain-source On Resistance-Max 0.016 Ω 0.0135 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-263AB TO-263AB
JESD-30 Code R-PSSO-G2 R-PSSO-G2
JESD-609 Code e3 e3
Moisture Sensitivity Level 1 1
Number of Elements 1 1
Number of Terminals 2 2
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 175 °C 175 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 245 245
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 150 W 115 W
Pulsed Drain Current-Max (IDM) 240 A
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Finish Matte Tin (Sn) - annealed Matte Tin (Sn) - annealed
Terminal Form GULL WING GULL WING
Terminal Position SINGLE SINGLE
Time@Peak Reflow Temperature-Max (s) 30 30
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 1 1
Pbfree Code Yes
Manufacturer Package Code 418AJ

Compare STB60NF06LT4 with alternatives

Compare FDB13AN06A0 with alternatives