STB60NF06L vs STB60NF06LT4 feature comparison

STB60NF06L STMicroelectronics

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STB60NF06LT4 STMicroelectronics

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Rohs Code Yes Yes
Part Life Cycle Code Active Active
Ihs Manufacturer STMICROELECTRONICS STMICROELECTRONICS
Part Package Code D2PAK D2PAK
Package Description SMALL OUTLINE, R-PSSO-G2 D2PAK-3
Pin Count 4 3
Reach Compliance Code not_compliant not_compliant
ECCN Code EAR99 EAR99
Samacsys Manufacturer STMicroelectronics STMicroelectronics
Avalanche Energy Rating (Eas) 320 mJ 320 mJ
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V 60 V
Drain Current-Max (ID) 60 A 60 A
Drain-source On Resistance-Max 0.016 Ω 0.016 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-263AB TO-263AB
JESD-30 Code R-PSSO-G2 R-PSSO-G2
JESD-609 Code e3 e3
Moisture Sensitivity Level 1 1
Number of Elements 1 1
Number of Terminals 2 2
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 175 °C 175 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 150 W 150 W
Pulsed Drain Current-Max (IDM) 240 A 240 A
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Finish Matte Tin (Sn) Matte Tin (Sn) - annealed
Terminal Form GULL WING GULL WING
Terminal Position SINGLE SINGLE
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 2 1
Factory Lead Time 39 Weeks
Additional Feature LOW THRESHOLD, AVALANCHE RATED
Peak Reflow Temperature (Cel) 245
Time@Peak Reflow Temperature-Max (s) 30

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