STB5NB60-1 vs FQB7N60 feature comparison

STB5NB60-1 STMicroelectronics

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FQB7N60 Fairchild Semiconductor Corporation

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Pbfree Code No
Rohs Code No No
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer STMICROELECTRONICS FAIRCHILD SEMICONDUCTOR CORP
Part Package Code TO-262AA TO-263
Package Description TO-262, I2PAK-3 SMALL OUTLINE, R-PSSO-G2
Pin Count 3 3
Reach Compliance Code not_compliant unknown
ECCN Code EAR99 EAR99
Additional Feature AVALANCHE RATED AVALANCHE RATED
Avalanche Energy Rating (Eas) 300 mJ 580 mJ
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600 V 600 V
Drain Current-Max (ID) 5 A 7.4 A
Drain-source On Resistance-Max 2 Ω 1 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-262AA TO-263AB
JESD-30 Code R-PSIP-T3 R-PSSO-G2
JESD-609 Code e0 e0
Number of Elements 1 1
Number of Terminals 3 2
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style IN-LINE SMALL OUTLINE
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 100 W 3.13 W
Pulsed Drain Current-Max (IDM) 20 A 29.6 A
Qualification Status Not Qualified Not Qualified
Surface Mount NO YES
Terminal Finish TIN LEAD TIN LEAD
Terminal Form THROUGH-HOLE GULL WING
Terminal Position SINGLE SINGLE
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 1 4
HTS Code 8541.29.00.95
Case Connection DRAIN
Moisture Sensitivity Level 1

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