STB5NB60-1
vs
FQB7N60
feature comparison
Pbfree Code |
No
|
|
Rohs Code |
No
|
No
|
Part Life Cycle Code |
Obsolete
|
Obsolete
|
Ihs Manufacturer |
STMICROELECTRONICS
|
FAIRCHILD SEMICONDUCTOR CORP
|
Part Package Code |
TO-262AA
|
TO-263
|
Package Description |
TO-262, I2PAK-3
|
SMALL OUTLINE, R-PSSO-G2
|
Pin Count |
3
|
3
|
Reach Compliance Code |
not_compliant
|
unknown
|
ECCN Code |
EAR99
|
EAR99
|
Additional Feature |
AVALANCHE RATED
|
AVALANCHE RATED
|
Avalanche Energy Rating (Eas) |
300 mJ
|
580 mJ
|
Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min |
600 V
|
600 V
|
Drain Current-Max (ID) |
5 A
|
7.4 A
|
Drain-source On Resistance-Max |
2 Ω
|
1 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
JEDEC-95 Code |
TO-262AA
|
TO-263AB
|
JESD-30 Code |
R-PSIP-T3
|
R-PSSO-G2
|
JESD-609 Code |
e0
|
e0
|
Number of Elements |
1
|
1
|
Number of Terminals |
3
|
2
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Operating Temperature-Max |
150 °C
|
150 °C
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
IN-LINE
|
SMALL OUTLINE
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Power Dissipation-Max (Abs) |
100 W
|
3.13 W
|
Pulsed Drain Current-Max (IDM) |
20 A
|
29.6 A
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Surface Mount |
NO
|
YES
|
Terminal Finish |
TIN LEAD
|
TIN LEAD
|
Terminal Form |
THROUGH-HOLE
|
GULL WING
|
Terminal Position |
SINGLE
|
SINGLE
|
Transistor Application |
SWITCHING
|
SWITCHING
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
1
|
4
|
HTS Code |
|
8541.29.00.95
|
Case Connection |
|
DRAIN
|
Moisture Sensitivity Level |
|
1
|
|
|
|
Compare STB5NB60-1 with alternatives
Compare FQB7N60 with alternatives