STB18NM80TRL
vs
SPW17N80C3
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Obsolete
Not Recommended
Ihs Manufacturer
STMICROELECTRONICS
INFINEON TECHNOLOGIES AG
Part Package Code
D2PAK
TO-247
Package Description
SMALL OUTLINE, R-PSSO-G2
ROHS COMPLIANT, PLASTIC PACKAGE-3
Pin Count
4
3
Reach Compliance Code
unknown
compliant
ECCN Code
EAR99
EAR99
Avalanche Energy Rating (Eas)
600 mJ
670 mJ
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
800 V
800 V
Drain Current-Max (ID)
17 A
17 A
Drain-source On Resistance-Max
0.295 Ω
0.29 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-263AB
TO-247
JESD-30 Code
R-PSSO-G2
R-PSFM-T3
Number of Elements
1
1
Number of Terminals
2
3
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
150 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
FLANGE MOUNT
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Pulsed Drain Current-Max (IDM)
68 A
51 A
Qualification Status
Not Qualified
Not Qualified
Surface Mount
YES
NO
Terminal Form
GULL WING
THROUGH-HOLE
Terminal Position
SINGLE
SINGLE
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
1
4
Pbfree Code
Rohs Code
Samacsys Manufacturer
Infineon
Additional Feature
AVALANCHE RATED, HIGH VOLTAGE
JESD-609 Code
e3
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Power Dissipation-Max (Abs)
208 W
Terminal Finish
Tin (Sn)
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Compare STB18NM80TRL with alternatives
Compare SPW17N80C3 with alternatives