STB11NK40ZT4 vs IRFB4310PBF feature comparison

STB11NK40ZT4 STMicroelectronics

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IRFB4310PBF Infineon Technologies AG

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Rohs Code Yes Yes
Part Life Cycle Code Active Active
Ihs Manufacturer STMICROELECTRONICS INFINEON TECHNOLOGIES AG
Part Package Code D2PAK
Package Description TO-263, D2PAK-3
Pin Count 4
Reach Compliance Code not_compliant compliant
ECCN Code EAR99 EAR99
Factory Lead Time 14 Weeks 4 Weeks
Samacsys Manufacturer STMicroelectronics Infineon
Additional Feature HIGH RELIABILITY
Avalanche Energy Rating (Eas) 190 mJ 980 mJ
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 400 V 100 V
Drain Current-Max (ID) 9 A 75 A
Drain-source On Resistance-Max 0.55 Ω 0.007 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-263AB TO-220AB
JESD-30 Code R-PSSO-G2 R-PSFM-T3
JESD-609 Code e3 e3
Moisture Sensitivity Level 1
Number of Elements 1 1
Number of Terminals 2 3
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 175 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE FLANGE MOUNT
Peak Reflow Temperature (Cel) 245 NOT SPECIFIED
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 110 W 300 W
Pulsed Drain Current-Max (IDM) 36 A 550 A
Qualification Status Not Qualified Not Qualified
Surface Mount YES NO
Terminal Finish Matte Tin (Sn) - annealed Matte Tin (Sn) - with Nickel (Ni) barrier
Terminal Form GULL WING THROUGH-HOLE
Terminal Position SINGLE SINGLE
Time@Peak Reflow Temperature-Max (s) 30 NOT SPECIFIED
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 1 1
Case Connection DRAIN

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