STB10NK60Z-1 vs IRFSL11N50APBF feature comparison

STB10NK60Z-1 STMicroelectronics

Buy Now Datasheet

IRFSL11N50APBF International Rectifier

Buy Now Datasheet
Rohs Code Yes Yes
Part Life Cycle Code Obsolete Transferred
Ihs Manufacturer STMICROELECTRONICS INTERNATIONAL RECTIFIER CORP
Part Package Code TO-262AA TO-262AA
Package Description IN-LINE, R-PSIP-T3 LEAD FREE, PLASTIC, TO-262, 3 PIN
Pin Count 3 3
Reach Compliance Code not_compliant not_compliant
ECCN Code EAR99 EAR99
Date Of Intro 1980-01-04
Samacsys Manufacturer STMicroelectronics
Avalanche Energy Rating (Eas) 300 mJ 390 mJ
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600 V 500 V
Drain Current-Max (ID) 10 A 11 A
Drain-source On Resistance-Max 0.75 Ω 0.55 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-262AA TO-262AA
JESD-30 Code R-PSIP-T3 R-PSIP-T3
JESD-609 Code e3 e3
Number of Elements 1 1
Number of Terminals 3 3
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 175 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style IN-LINE IN-LINE
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 115 W 190 W
Pulsed Drain Current-Max (IDM) 36 A 44 A
Qualification Status Not Qualified Not Qualified
Surface Mount NO NO
Terminal Finish MATTE TIN MATTE TIN OVER NICKEL
Terminal Form THROUGH-HOLE THROUGH-HOLE
Terminal Position SINGLE SINGLE
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 1 3
Additional Feature AVALANCHE RATED
Case Connection DRAIN
Moisture Sensitivity Level 1
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30

Compare STB10NK60Z-1 with alternatives

Compare IRFSL11N50APBF with alternatives