SSP4N60AS vs SSP4N60A feature comparison

SSP4N60AS Fairchild Semiconductor Corporation

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SSP4N60A Samsung Semiconductor

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Rohs Code No No
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP SAMSUNG SEMICONDUCTOR INC
Part Package Code TO-220AB SFM
Package Description FLANGE MOUNT, R-PSFM-T3 TO-220, 3 PIN
Pin Count 3 3
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
Avalanche Energy Rating (Eas) 262 mJ 358 mJ
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600 V 600 V
Drain Current-Max (ID) 4 A 4 A
Drain-source On Resistance-Max 2.5 Ω 2.5 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB TO-220AB
JESD-30 Code R-PSFM-T3 R-PSFM-T3
JESD-609 Code e0 e0
Number of Elements 1 1
Number of Terminals 3 3
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style FLANGE MOUNT FLANGE MOUNT
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 100 W 75 W
Pulsed Drain Current-Max (IDM) 16 A 16 A
Qualification Status Not Qualified Not Qualified
Surface Mount NO NO
Terminal Finish TIN LEAD TIN LEAD
Terminal Form THROUGH-HOLE THROUGH-HOLE
Terminal Position SINGLE SINGLE
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 2 2
HTS Code 8541.29.00.95
Feedback Cap-Max (Crss) 40 pF
Power Dissipation Ambient-Max 75 W
Turn-off Time-Max (toff) 160 ns
Turn-on Time-Max (ton) 190 ns

Compare SSP4N60AS with alternatives

Compare SSP4N60A with alternatives