SSP4N60 vs MTP3N60 feature comparison

SSP4N60 Samsung Semiconductor

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MTP3N60 STMicroelectronics

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Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer SAMSUNG SEMICONDUCTOR INC STMICROELECTRONICS
Part Package Code SFM TO-220AB
Package Description TO-220, 3 PIN FLANGE MOUNT, R-PSFM-T3
Pin Count 3 3
Reach Compliance Code unknown not_compliant
ECCN Code EAR99 EAR99
HTS Code 8541.29.00.95 8541.29.00.95
Avalanche Energy Rating (Eas) 358 mJ 300 mJ
Configuration SINGLE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600 V 600 V
Drain Current-Max (ID) 4 A 3.9 A
Drain-source On Resistance-Max 2.5 Ω 2.5 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 40 pF 55 pF
JEDEC-95 Code TO-220AB TO-220AB
JESD-30 Code R-PSFM-T3 R-PSFM-T3
Number of Elements 1 1
Number of Terminals 3 3
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style FLANGE MOUNT FLANGE MOUNT
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation Ambient-Max 75 W 100 W
Power Dissipation-Max (Abs) 75 W 75 W
Pulsed Drain Current-Max (IDM) 16 A 14 A
Qualification Status Not Qualified Not Qualified
Surface Mount NO NO
Terminal Form THROUGH-HOLE THROUGH-HOLE
Terminal Position SINGLE SINGLE
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Turn-off Time-Max (toff) 160 ns
Turn-on Time-Max (ton) 190 ns 102 ns
Base Number Matches 1 6
Rohs Code No
JESD-609 Code e0
Terminal Finish TIN LEAD

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