SSM6J505NU,LF(T vs SIA447DJ-T1-GE3 feature comparison

SSM6J505NU,LF(T Toshiba America Electronic Components

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SIA447DJ-T1-GE3 Vishay Intertechnologies

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Rohs Code Yes Yes
Part Life Cycle Code Active Active
Ihs Manufacturer TOSHIBA CORP VISHAY INTERTECHNOLOGY INC
Package Description SMALL OUTLINE, S-PDSO-N6 SC-70, 6 PIN
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 12 V 12 V
Drain Current-Max (ID) 12 A 12 A
Drain-source On Resistance-Max 0.016 Ω 0.0135 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 Code S-PDSO-N6 S-PDSO-N3
Number of Elements 1 1
Number of Terminals 6 3
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape SQUARE SQUARE
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED 260
Polarity/Channel Type P-CHANNEL P-CHANNEL
Pulsed Drain Current-Max (IDM) 30 A 50 A
Surface Mount YES YES
Terminal Form NO LEAD NO LEAD
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED 30
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 1 2
HTS Code 8541.29.00.95
Factory Lead Time 7 Weeks, 3 Days
Samacsys Manufacturer Vishay
Feedback Cap-Max (Crss) 585 pF
JESD-609 Code e3
Moisture Sensitivity Level 1
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Power Dissipation Ambient-Max 3.5 W
Power Dissipation-Max (Abs) 19 W
Terminal Finish Matte Tin (Sn) - annealed
Turn-off Time-Max (toff) 170 ns
Turn-on Time-Max (ton) 120 ns

Compare SSM6J505NU,LF(T with alternatives

Compare SIA447DJ-T1-GE3 with alternatives