SSM3K123TU,LF
vs
PMV30UN2VL
feature comparison
| Pbfree Code |
Yes
|
|
| Rohs Code |
Yes
|
|
| Part Life Cycle Code |
Active
|
Active
|
| Ihs Manufacturer |
TOSHIBA CORP
|
NEXPERIA
|
| Reach Compliance Code |
compliant
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| Factory Lead Time |
53 Weeks, 1 Day
|
|
| Samacsys Manufacturer |
Toshiba
|
Nexperia
|
| Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
| DS Breakdown Voltage-Min |
20 V
|
20 V
|
| Drain Current-Max (ID) |
4.2 A
|
4.2 A
|
| Drain-source On Resistance-Max |
0.032 Ω
|
0.032 Ω
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| JESD-30 Code |
R-PDSO-F3
|
R-PDSO-G3
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
3
|
3
|
| Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
| Peak Reflow Temperature (Cel) |
260
|
260
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Surface Mount |
YES
|
YES
|
| Terminal Form |
FLAT
|
GULL WING
|
| Terminal Position |
DUAL
|
DUAL
|
| Time@Peak Reflow Temperature-Max (s) |
30
|
30
|
| Transistor Application |
SWITCHING
|
SWITCHING
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Base Number Matches |
3
|
1
|
| Part Package Code |
|
TO-236
|
| Pin Count |
|
3
|
| Manufacturer Package Code |
|
SOT23
|
| JEDEC-95 Code |
|
TO-236AB
|
| JESD-609 Code |
|
e3
|
| Moisture Sensitivity Level |
|
1
|
| Reference Standard |
|
IEC-60134
|
| Terminal Finish |
|
TIN
|
|
|
|
Compare SSM3K123TU,LF with alternatives
Compare PMV30UN2VL with alternatives