SSH22N35 vs IRFP350PBF feature comparison

SSH22N35 Samsung Semiconductor

Buy Now Datasheet

IRFP350PBF Vishay Siliconix

Buy Now Datasheet
Obsolete Transferred
SAMSUNG SEMICONDUCTOR INC VISHAY SILICONIX
TO-3P TO-247
FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3
3 3
unknown unknown
EAR99 EAR99
SINGLE SINGLE WITH BUILT-IN DIODE
350 V 400 V
22 A 16 A
0.25 Ω 0.3 Ω
METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
R-PSFM-T3 R-PSFM-T3
1 1
3 3
ENHANCEMENT MODE ENHANCEMENT MODE
150 °C 150 °C
PLASTIC/EPOXY PLASTIC/EPOXY
RECTANGULAR RECTANGULAR
FLANGE MOUNT FLANGE MOUNT
N-CHANNEL N-CHANNEL
230 W
Not Qualified Not Qualified
NO NO
THROUGH-HOLE THROUGH-HOLE
SINGLE SINGLE
SILICON SILICON
1 3
Yes
Yes
AVALANCHE RATED
390 mJ
DRAIN
TO-247
e3
64 A
MATTE TIN
SWITCHING

Compare SSH22N35 with alternatives

Compare IRFP350PBF with alternatives