SSH12N80
vs
2SK2607
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
SAMSUNG SEMICONDUCTOR INC
TOSHIBA CORP
Part Package Code
TO-3P
SC-65
Package Description
FLANGE MOUNT, R-PSFM-T3
FLANGE MOUNT, R-PSFM-T3
Pin Count
3
3
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
Configuration
SINGLE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
800 V
800 V
Drain Current-Max (ID)
12 A
9 A
Drain-source On Resistance-Max
0.9 Ω
1.2 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code
R-PSFM-T3
R-PSFM-T3
Number of Elements
1
1
Number of Terminals
3
3
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
150 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
FLANGE MOUNT
FLANGE MOUNT
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Power Dissipation-Max (Abs)
280 W
150 W
Qualification Status
Not Qualified
Not Qualified
Surface Mount
NO
NO
Terminal Form
THROUGH-HOLE
THROUGH-HOLE
Terminal Position
SINGLE
SINGLE
Transistor Element Material
SILICON
SILICON
Base Number Matches
1
1
Rohs Code
HTS Code
8541.29.00.95
Samacsys Manufacturer
Toshiba
Avalanche Energy Rating (Eas)
778 mJ
Case Connection
DRAIN
JESD-609 Code
e0
Power Dissipation Ambient-Max
150 W
Pulsed Drain Current-Max (IDM)
27 A
Terminal Finish
TIN LEAD
Transistor Application
SWITCHING
Compare SSH12N80 with alternatives
Compare 2SK2607 with alternatives