SSH10N80
vs
STW9NA80
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
SAMSUNG SEMICONDUCTOR INC
STMICROELECTRONICS
Part Package Code
TO-3P
TO-247
Package Description
TO-3P, 3 PIN
TO-247, 3 PIN
Pin Count
3
3
Reach Compliance Code
unknown
not_compliant
ECCN Code
EAR99
EAR99
Configuration
SINGLE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
800 V
800 V
Drain Current-Max (ID)
10 A
9.1 A
Drain-source On Resistance-Max
1.2 Ω
1 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code
R-PSFM-T3
R-PSFM-T3
Number of Elements
1
1
Number of Terminals
3
3
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
150 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
FLANGE MOUNT
FLANGE MOUNT
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Power Dissipation-Max (Abs)
230 W
190 W
Qualification Status
Not Qualified
Not Qualified
Surface Mount
NO
NO
Terminal Form
THROUGH-HOLE
THROUGH-HOLE
Terminal Position
SINGLE
SINGLE
Transistor Element Material
SILICON
SILICON
Base Number Matches
1
2
Rohs Code
Additional Feature
AVALANCHE RATED
Avalanche Energy Rating (Eas)
415 mJ
Case Connection
DRAIN
JEDEC-95 Code
TO-247
JESD-609 Code
e0
Pulsed Drain Current-Max (IDM)
36.4 A
Terminal Finish
TIN LEAD
Transistor Application
SWITCHING
Compare SSH10N80 with alternatives
Compare STW9NA80 with alternatives