SSF6N80A
vs
RFG50N06
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Transferred
Obsolete
Ihs Manufacturer
SAMSUNG SEMICONDUCTOR INC
HARRIS SEMICONDUCTOR
Part Package Code
TO-3PF
Package Description
FLANGE MOUNT, R-PSFM-T3
FLANGE MOUNT, R-PSFM-T3
Pin Count
3
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
Avalanche Energy Rating (Eas)
486 mJ
Case Connection
ISOLATED
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
800 V
60 V
Drain Current-Max (ID)
4.5 A
50 A
Drain-source On Resistance-Max
2 Ω
0.022 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code
R-PSFM-T3
R-PSFM-T3
Number of Elements
1
1
Number of Terminals
3
3
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
175 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
FLANGE MOUNT
FLANGE MOUNT
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Power Dissipation-Max (Abs)
90 W
131 W
Pulsed Drain Current-Max (IDM)
24 A
Qualification Status
Not Qualified
Not Qualified
Surface Mount
NO
NO
Terminal Form
THROUGH-HOLE
THROUGH-HOLE
Terminal Position
SINGLE
SINGLE
Transistor Element Material
SILICON
SILICON
Base Number Matches
1
2
Rohs Code
HTS Code
8541.29.00.95
Additional Feature
AVALANCHE RATED
JEDEC-95 Code
TO-247
JESD-609 Code
e0
Power Dissipation Ambient-Max
131 W
Terminal Finish
TIN LEAD
Transistor Application
SWITCHING
Turn-off Time-Max (toff)
75 ns
Turn-on Time-Max (ton)
95 ns
Compare SSF6N80A with alternatives
Compare RFG50N06 with alternatives