SS35F vs F3AFF1 feature comparison

SS35F Galaxy Microelectronics

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F3AFF1 Yangzhou Yangjie Electronics Co Ltd

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Rohs Code Yes Yes
Part Life Cycle Code Active Active
Ihs Manufacturer CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD YANGZHOU YANGJIE ELECTRONICS CO LTD
Package Description R-PDSO-F2
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.80
Application GENERAL PURPOSE FAST RECOVERY
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
Forward Voltage-Max (VF) 0.75 V 1.3 V
JESD-30 Code R-PDSO-F2 R-PDSO-F2
Non-rep Pk Forward Current-Max 80 A 80 A
Number of Elements 1 1
Number of Phases 1 1
Number of Terminals 2 2
Operating Temperature-Max 125 °C 150 °C
Operating Temperature-Min -55 °C -55 °C
Output Current-Max 3 A 3 A
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Rep Pk Reverse Voltage-Max 50 V 50 V
Reverse Current-Max 500 µA 5 µA
Surface Mount YES YES
Technology SCHOTTKY
Terminal Form FLAT FLAT
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Number Matches 2 1
Additional Feature FREE WHEELING DIODE
Reverse Recovery Time-Max 0.15 µs
Reverse Test Voltage 50 V

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