SS35B
vs
S3ABHE3-TP
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Active
Obsolete
Ihs Manufacturer
GALAXY SEMI-CONDUCTOR CO LTD
MICRO COMMERCIAL COMPONENTS CORP
Reach Compliance Code
unknown
not_compliant
ECCN Code
EAR99
Application
GENERAL PURPOSE
GENERAL PURPOSE
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
RECTIFIER DIODE
RECTIFIER DIODE
Forward Voltage-Max (VF)
0.75 V
1.15 V
JESD-30 Code
R-PDSO-C2
R-PDSO-C2
Non-rep Pk Forward Current-Max
100 A
100 A
Number of Elements
1
1
Number of Phases
1
1
Number of Terminals
2
2
Operating Temperature-Max
150 °C
150 °C
Output Current-Max
3 A
3 A
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Peak Reflow Temperature (Cel)
260
260
Rep Pk Reverse Voltage-Max
50 V
50 V
Surface Mount
YES
YES
Technology
SCHOTTKY
Terminal Form
C BEND
C BEND
Terminal Position
DUAL
DUAL
Base Number Matches
2
1
Package Description
SMB, 2 PIN
Samacsys Manufacturer
MCC
Breakdown Voltage-Min
50 V
JEDEC-95 Code
DO-214AA
JESD-609 Code
e3
Moisture Sensitivity Level
1
Operating Temperature-Min
-55 °C
Reference Standard
AEC-Q101
Reverse Current-Max
10 µA
Reverse Test Voltage
50 V
Terminal Finish
MATTE TIN
Time@Peak Reflow Temperature-Max (s)
10
Compare SS35B with alternatives
Compare S3ABHE3-TP with alternatives