SS35B vs S3ABHE3-TP feature comparison

SS35B Galaxy Microelectronics

Buy Now Datasheet

S3ABHE3-TP Micro Commercial Components

Buy Now Datasheet
Rohs Code Yes Yes
Part Life Cycle Code Active Obsolete
Ihs Manufacturer CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD MICRO COMMERCIAL COMPONENTS CORP
Reach Compliance Code unknown not_compliant
ECCN Code EAR99
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
Forward Voltage-Max (VF) 0.75 V 1.15 V
Non-rep Pk Forward Current-Max 100 A 100 A
Number of Elements 1 1
Number of Phases 1 1
Operating Temperature-Max 150 °C 150 °C
Output Current-Max 3 A 3 A
Peak Reflow Temperature (Cel) 260 260
Rep Pk Reverse Voltage-Max 50 V 50 V
Surface Mount YES YES
Technology SCHOTTKY
Base Number Matches 2 1
Package Description SMB, 2 PIN
Application GENERAL PURPOSE
Breakdown Voltage-Min 50 V
JEDEC-95 Code DO-214AA
JESD-30 Code R-PDSO-C2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Terminals 2
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Reference Standard AEC-Q101
Reverse Current-Max 10 µA
Reverse Test Voltage 50 V
Terminal Finish MATTE TIN
Terminal Form C BEND
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 10

Compare SS35B with alternatives

Compare S3ABHE3-TP with alternatives