SRT14HB0G vs 1N5819PBFREE feature comparison

SRT14HB0G Taiwan Semiconductor

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1N5819PBFREE Central Semiconductor Corp

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Rohs Code Yes Yes
Part Life Cycle Code Active Active
Ihs Manufacturer TAIWAN SEMICONDUCTOR CO LTD CENTRAL SEMICONDUCTOR CORP
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.80 8541.10.00.80
Additional Feature LOW POWER LOSS
Application EFFICIENCY GENERAL PURPOSE
Case Connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
Forward Voltage-Max (VF) 0.55 V 0.9 V
JESD-30 Code O-PALF-W2 O-PALF-W2
JESD-609 Code e3 e3
Non-rep Pk Forward Current-Max 25 A 25 A
Number of Elements 1 1
Number of Phases 1 1
Number of Terminals 2 2
Operating Temperature-Max 125 °C 150 °C
Operating Temperature-Min -55 °C -65 °C
Output Current-Max 1 A 1 A
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Peak Reflow Temperature (Cel) 260 260
Reference Standard AEC-Q101
Rep Pk Reverse Voltage-Max 40 V 40 V
Reverse Current-Max 500 µA 1000 µA
Surface Mount NO NO
Technology SCHOTTKY SCHOTTKY
Terminal Finish MATTE TIN Matte Tin (Sn)
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Time@Peak Reflow Temperature-Max (s) 10 30
Base Number Matches 1 1
Breakdown Voltage-Min 40 V
JEDEC-95 Code DO-41
Moisture Sensitivity Level 1
Reverse Test Voltage 40 V

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