SRAS850 vs UGB8ATHE3_A/P feature comparison

SRAS850 Taiwan Semiconductor

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UGB8ATHE3_A/P Vishay Intertechnologies

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Rohs Code Yes Yes
Part Life Cycle Code Active Obsolete
Ihs Manufacturer TAIWAN SEMICONDUCTOR CO LTD VISHAY INTERTECHNOLOGY INC
Package Description R-PSSO-G2 D2PAK-3/2
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.80
Additional Feature HIGH RELIABILITY, LOW POWER LOSS FREE WHEELING DIODE
Application EFFICIENCY EFFICIENCY
Case Connection CATHODE CATHODE
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
JESD-30 Code R-PSSO-G2 R-PSSO-G2
JESD-609 Code e3 e3
Moisture Sensitivity Level 1 1
Non-rep Pk Forward Current-Max 150 A 150 A
Number of Elements 1 1
Number of Phases 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -65 °C -55 °C
Output Current-Max 8 A 8 A
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Qualification Status Not Qualified
Reference Standard UL RECOGNIZED AEC-Q101
Rep Pk Reverse Voltage-Max 50 V 50 V
Surface Mount YES YES
Technology SCHOTTKY
Terminal Finish Matte Tin (Sn) Matte Tin (Sn)
Terminal Form GULL WING GULL WING
Terminal Position SINGLE SINGLE
Base Number Matches 1 1
Factory Lead Time 40 Weeks
Date Of Intro 2019-03-25
Forward Voltage-Max (VF) 1.2 V
JEDEC-95 Code TO-263AB
Peak Reflow Temperature (Cel) 245
Reverse Current-Max 10 µA
Reverse Recovery Time-Max 0.03 µs
Reverse Test Voltage 50 V
Time@Peak Reflow Temperature-Max (s) 30

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