SRAF8100D0G
vs
UGF8BT-E3/45
feature comparison
Part Life Cycle Code |
Obsolete
|
Obsolete
|
Ihs Manufacturer |
TAIWAN SEMICONDUCTOR CO LTD
|
VISHAY INTERTECHNOLOGY INC
|
Package Description |
R-PSFM-T2
|
ITO-220AC, 2 PIN
|
Reach Compliance Code |
compliant
|
compliant
|
ECCN Code |
EAR99
|
|
HTS Code |
8541.10.00.80
|
|
Additional Feature |
FREE WHEELING DIODE, HIGH RELIABILITY, LOW POWER LOSS
|
FREE WHEELING DIODE
|
Application |
EFFICIENCY
|
EFFICIENCY
|
Case Connection |
ISOLATED
|
ISOLATED
|
Configuration |
SINGLE
|
SINGLE
|
Diode Element Material |
SILICON
|
SILICON
|
Diode Type |
RECTIFIER DIODE
|
RECTIFIER DIODE
|
Forward Voltage-Max (VF) |
0.85 V
|
1.2 V
|
JEDEC-95 Code |
TO-220AC
|
TO-220AC
|
JESD-30 Code |
R-PSFM-T2
|
R-PSFM-T2
|
Non-rep Pk Forward Current-Max |
150 A
|
150 A
|
Number of Elements |
1
|
1
|
Number of Phases |
1
|
1
|
Number of Terminals |
2
|
2
|
Operating Temperature-Max |
150 °C
|
150 °C
|
Operating Temperature-Min |
-65 °C
|
-55 °C
|
Output Current-Max |
8 A
|
8 A
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
FLANGE MOUNT
|
FLANGE MOUNT
|
Reference Standard |
UL RECOGNIZED
|
|
Rep Pk Reverse Voltage-Max |
100 V
|
100 V
|
Reverse Current-Max |
100 µA
|
10 µA
|
Surface Mount |
NO
|
NO
|
Technology |
SCHOTTKY
|
|
Terminal Finish |
PURE TIN
|
Matte Tin (Sn)
|
Terminal Form |
THROUGH-HOLE
|
THROUGH-HOLE
|
Terminal Position |
SINGLE
|
SINGLE
|
Base Number Matches |
1
|
1
|
Rohs Code |
|
Yes
|
JESD-609 Code |
|
e3
|
Peak Reflow Temperature (Cel) |
|
NOT SPECIFIED
|
Qualification Status |
|
Not Qualified
|
Reverse Recovery Time-Max |
|
0.03 µs
|
Reverse Test Voltage |
|
100 V
|
Time@Peak Reflow Temperature-Max (s) |
|
NOT SPECIFIED
|
|
|
|
Compare SRAF8100D0G with alternatives
Compare UGF8BT-E3/45 with alternatives