SQM40N15-38_GE3
vs
APT5020BVRG
feature comparison
Rohs Code |
Yes
|
Yes
|
Part Life Cycle Code |
End Of Life
|
Transferred
|
Ihs Manufacturer |
VISHAY INTERTECHNOLOGY INC
|
MICROSEMI CORP
|
Package Description |
SMALL OUTLINE, R-PSSO-G2
|
|
Reach Compliance Code |
compliant
|
unknown
|
ECCN Code |
EAR99
|
EAR99
|
Samacsys Manufacturer |
Vishay
|
Microsemi Corporation
|
Avalanche Energy Rating (Eas) |
80 mJ
|
1300 mJ
|
Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min |
150 V
|
500 V
|
Drain Current-Max (ID) |
40 A
|
26 A
|
Drain-source On Resistance-Max |
0.038 Ω
|
0.2 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
JEDEC-95 Code |
TO-263AB
|
TO-247
|
JESD-30 Code |
R-PSSO-G2
|
R-PSFM-T3
|
Number of Elements |
1
|
1
|
Number of Terminals |
2
|
3
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Operating Temperature-Max |
175 °C
|
150 °C
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
SMALL OUTLINE
|
FLANGE MOUNT
|
Peak Reflow Temperature (Cel) |
260
|
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Pulsed Drain Current-Max (IDM) |
80 A
|
104 A
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Surface Mount |
YES
|
NO
|
Terminal Form |
GULL WING
|
THROUGH-HOLE
|
Terminal Position |
SINGLE
|
SINGLE
|
Time@Peak Reflow Temperature-Max (s) |
40
|
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
1
|
2
|
Pbfree Code |
|
Yes
|
Additional Feature |
|
HIGH VOLTAGE
|
Case Connection |
|
DRAIN
|
JESD-609 Code |
|
e1
|
Moisture Sensitivity Level |
|
1
|
Terminal Finish |
|
TIN SILVER COPPER
|
Transistor Application |
|
SWITCHING
|
|
|
|
Compare SQM40N15-38_GE3 with alternatives
Compare APT5020BVRG with alternatives