SPI80N04S2-04
vs
AP9963GS-HF
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Obsolete
Contact Manufacturer
Ihs Manufacturer
INFINEON TECHNOLOGIES AG
ADVANCED POWER ELECTRONICS CORP
Part Package Code
TO-262AA
D2PAK
Package Description
IN-LINE, R-PSIP-T3
SMALL OUTLINE, R-PSSO-G2
Pin Count
3
4
Reach Compliance Code
unknown
compliant
ECCN Code
EAR99
EAR99
Additional Feature
AVALANCHE RATED
Avalanche Energy Rating (Eas)
810 mJ
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
40 V
40 V
Drain Current-Max (ID)
80 A
80 A
Drain-source On Resistance-Max
0.0037 Ω
0.004 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-262AA
TO-263AB
JESD-30 Code
R-PSIP-T3
R-PSSO-G2
JESD-609 Code
e3
Number of Elements
1
1
Number of Terminals
3
2
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
175 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
IN-LINE
SMALL OUTLINE
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Power Dissipation-Max (Abs)
300 W
Pulsed Drain Current-Max (IDM)
320 A
300 A
Qualification Status
Not Qualified
Surface Mount
NO
YES
Terminal Finish
MATTE TIN
Terminal Form
THROUGH-HOLE
GULL WING
Terminal Position
SINGLE
SINGLE
Transistor Element Material
SILICON
SILICON
Base Number Matches
1
1
Transistor Application
SWITCHING
Compare SPI80N04S2-04 with alternatives
Compare AP9963GS-HF with alternatives