SPD30N03S2L07GBTMA1
vs
TPH11003NL
feature comparison
| Part Life Cycle Code |
Obsolete
|
Active
|
| Ihs Manufacturer |
INFINEON TECHNOLOGIES AG
|
TOSHIBA CORP
|
| Package Description |
GREEN, PLASTIC PACKAGE-3/2
|
SMALL OUTLINE, S-PDSO-F5
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| Factory Lead Time |
4 Weeks
|
16 Weeks
|
| Additional Feature |
AVALANCHE RATED
|
|
| Avalanche Energy Rating (Eas) |
250 mJ
|
29 mJ
|
| Case Connection |
DRAIN
|
DRAIN
|
| Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
| DS Breakdown Voltage-Min |
30 V
|
30 V
|
| Drain Current-Max (ID) |
30 A
|
32 A
|
| Drain-source On Resistance-Max |
0.0098 Ω
|
0.011 Ω
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| JEDEC-95 Code |
TO-252
|
|
| JESD-30 Code |
R-PSSO-G2
|
S-PDSO-F5
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
2
|
5
|
| Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
SQUARE
|
| Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Pulsed Drain Current-Max (IDM) |
120 A
|
63 A
|
| Surface Mount |
YES
|
YES
|
| Terminal Form |
GULL WING
|
FLAT
|
| Terminal Position |
SINGLE
|
DUAL
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Base Number Matches |
1
|
1
|
| Samacsys Manufacturer |
|
Toshiba
|
| Transistor Application |
|
SWITCHING
|
|
|
|
Compare SPD30N03S2L07GBTMA1 with alternatives