SPD07N20GXT vs STD7NB20-1 feature comparison

SPD07N20GXT Infineon Technologies AG

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STD7NB20-1 STMicroelectronics

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Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG STMICROELECTRONICS
Part Package Code TO-252 TO-251AA
Package Description SMALL OUTLINE, R-PSSO-G2 IN-LINE, R-PSIP-T3
Pin Count 4 3
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 120 mJ 100 mJ
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 200 V 200 V
Drain Current-Max (ID) 7 A 7 A
Drain-source On Resistance-Max 0.4 Ω 0.4 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-252 TO-251AA
JESD-30 Code R-PSSO-G2 R-PSIP-T3
JESD-609 Code e3
Number of Elements 1 1
Number of Terminals 2 3
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE IN-LINE
Polarity/Channel Type N-CHANNEL N-CHANNEL
Pulsed Drain Current-Max (IDM) 28 A 28 A
Qualification Status Not Qualified Not Qualified
Surface Mount YES NO
Terminal Finish MATTE TIN
Terminal Form GULL WING THROUGH-HOLE
Terminal Position SINGLE SINGLE
Transistor Element Material SILICON SILICON
Base Number Matches 1 1
Operating Temperature-Max 150 °C
Power Dissipation-Max (Abs) 55 W
Transistor Application SWITCHING

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