SPB80N06S2-H5
vs
IPB80N06S3L06ATMA1
feature comparison
Part Life Cycle Code |
Obsolete
|
Active
|
Ihs Manufacturer |
INFINEON TECHNOLOGIES AG
|
INFINEON TECHNOLOGIES AG
|
Part Package Code |
D2PAK
|
|
Package Description |
SMALL OUTLINE, R-PSSO-G2
|
GREEN, TO-263, 3 PIN
|
Pin Count |
4
|
|
Reach Compliance Code |
unknown
|
compliant
|
ECCN Code |
EAR99
|
EAR99
|
Additional Feature |
AVALANCHE RATED
|
LOGIC LEVEL COMPATIBLE
|
Avalanche Energy Rating (Eas) |
700 mJ
|
250 mJ
|
Case Connection |
DRAIN
|
DRAIN
|
Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min |
55 V
|
55 V
|
Drain Current-Max (ID) |
80 A
|
80 A
|
Drain-source On Resistance-Max |
0.0055 Ω
|
0.0056 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
JEDEC-95 Code |
TO-263AB
|
TO-263
|
JESD-30 Code |
R-PSSO-G2
|
R-PSSO-G2
|
Number of Elements |
1
|
1
|
Number of Terminals |
2
|
2
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Operating Temperature-Max |
175 °C
|
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Power Dissipation-Max (Abs) |
300 W
|
|
Pulsed Drain Current-Max (IDM) |
320 A
|
320 A
|
Qualification Status |
Not Qualified
|
|
Surface Mount |
YES
|
YES
|
Terminal Form |
GULL WING
|
GULL WING
|
Terminal Position |
SINGLE
|
SINGLE
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
1
|
1
|
Transistor Application |
|
SWITCHING
|
|
|
|
Compare SPB80N06S2-H5 with alternatives
Compare IPB80N06S3L06ATMA1 with alternatives