SP8M8FU6TB
vs
SP8M8TB
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
ROHM CO LTD
ROHM CO LTD
Package Description
,
SMALL OUTLINE, R-PDSO-G8
Reach Compliance Code
compliant
compliant
ECCN Code
EAR99
EAR99
Samacsys Manufacturer
ROHM Semiconductor
ROHM Semiconductor
Drain Current-Max (ID)
6 A
6 A
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
150 °C
Polarity/Channel Type
N-CHANNEL AND P-CHANNEL
N-CHANNEL AND P-CHANNEL
Power Dissipation-Max (Abs)
2 W
2 W
Surface Mount
YES
YES
Base Number Matches
1
1
Pbfree Code
Part Package Code
SOT
Pin Count
8
Configuration
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
30 V
Drain-source On Resistance-Max
0.047 Ω
JESD-30 Code
R-PDSO-G8
JESD-609 Code
e2
Number of Elements
2
Number of Terminals
8
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Pulsed Drain Current-Max (IDM)
24 A
Qualification Status
Not Qualified
Terminal Finish
Tin/Copper (Sn/Cu)
Terminal Form
GULL WING
Terminal Position
DUAL
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Compare SP8M8FU6TB with alternatives
Compare SP8M8TB with alternatives