SP6150E3
vs
1N6150
feature comparison
Part Life Cycle Code |
Obsolete
|
Active
|
Ihs Manufacturer |
MICROSEMI CORP
|
NEW JERSEY SEMICONDUCTOR PRODUCTS INC
|
Package Description |
O-LALF-W2
|
|
Reach Compliance Code |
compliant
|
unknown
|
ECCN Code |
EAR99
|
|
HTS Code |
8541.10.00.50
|
|
Additional Feature |
HIGH RELIABILITY
|
|
Breakdown Voltage-Min |
20.85 V
|
19.8 V
|
Case Connection |
ISOLATED
|
|
Configuration |
SINGLE
|
SINGLE
|
Diode Element Material |
SILICON
|
SILICON
|
Diode Type |
TRANS VOLTAGE SUPPRESSOR DIODE
|
TRANS VOLTAGE SUPPRESSOR DIODE
|
JESD-30 Code |
O-LALF-W2
|
|
Non-rep Peak Rev Power Dis-Max |
1500 W
|
1500 W
|
Number of Elements |
1
|
1
|
Number of Terminals |
2
|
|
Package Body Material |
GLASS
|
|
Package Shape |
ROUND
|
|
Package Style |
LONG FORM
|
|
Polarity |
BIDIRECTIONAL
|
BIDIRECTIONAL
|
Power Dissipation-Max |
3 W
|
|
Rep Pk Reverse Voltage-Max |
16.7 V
|
16.7 V
|
Surface Mount |
NO
|
|
Technology |
AVALANCHE
|
AVALANCHE
|
Terminal Form |
WIRE
|
|
Terminal Position |
AXIAL
|
|
Base Number Matches |
1
|
12
|
|
|
|
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