SNJ54HCT14J
vs
5962R9571901VCX
feature comparison
| Pbfree Code |
Yes
|
|
| Rohs Code |
No
|
|
| Part Life Cycle Code |
Active
|
Transferred
|
| Ihs Manufacturer |
TEXAS INSTRUMENTS INC
|
HARRIS SEMICONDUCTOR
|
| Part Package Code |
DIP
|
|
| Package Description |
DIP, DIP14,.3
|
,
|
| Pin Count |
14
|
|
| Reach Compliance Code |
not_compliant
|
unknown
|
| ECCN Code |
EAR99
|
|
| HTS Code |
8542.39.00.01
|
8542.39.00.01
|
| Samacsys Manufacturer |
Texas Instruments
|
|
| Family |
HCT
|
HCT
|
| JESD-30 Code |
R-CDIP-T14
|
R-CDIP-T14
|
| JESD-609 Code |
e0
|
|
| Length |
19.56 mm
|
|
| Load Capacitance (CL) |
50 pF
|
|
| Logic IC Type |
INVERTER
|
INVERTER
|
| Max I(ol) |
0.004 A
|
|
| Number of Functions |
6
|
6
|
| Number of Inputs |
1
|
1
|
| Number of Terminals |
14
|
14
|
| Operating Temperature-Max |
125 °C
|
125 °C
|
| Operating Temperature-Min |
-55 °C
|
-55 °C
|
| Package Body Material |
CERAMIC, METAL-SEALED COFIRED
|
CERAMIC, METAL-SEALED COFIRED
|
| Package Code |
DIP
|
DIP
|
| Package Equivalence Code |
DIP14,.3
|
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
IN-LINE
|
IN-LINE
|
| Packing Method |
TUBE
|
|
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
|
| Power Supply Current-Max (ICC) |
0.02 mA
|
|
| Prop. Delay@Nom-Sup |
48 ns
|
|
| Propagation Delay (tpd) |
48 ns
|
21 ns
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Schmitt Trigger |
YES
|
|
| Screening Level |
MIL-PRF-38535
|
|
| Seated Height-Max |
5.08 mm
|
|
| Supply Voltage-Max (Vsup) |
5.5 V
|
5.5 V
|
| Supply Voltage-Min (Vsup) |
4.5 V
|
4.5 V
|
| Supply Voltage-Nom (Vsup) |
5 V
|
5 V
|
| Surface Mount |
NO
|
NO
|
| Technology |
CMOS
|
CMOS
|
| Temperature Grade |
MILITARY
|
MILITARY
|
| Terminal Finish |
Tin/Lead (Sn/Pb)
|
|
| Terminal Form |
THROUGH-HOLE
|
THROUGH-HOLE
|
| Terminal Pitch |
2.54 mm
|
|
| Terminal Position |
DUAL
|
DUAL
|
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
|
| Width |
7.62 mm
|
|
| Base Number Matches |
1
|
2
|
| Additional Feature |
|
RADIATION HARD CMOS/SILICON ON SAPPHIRE (SOS) TECHONOLOGY
|
| Total Dose |
|
100k Rad(Si) V
|
|
|
|
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